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New Process: SiXtron has
developed a highly
innovative process for depositing, in an extremely cost effective
manner and on various substrates, thin films of material in the silicon
carbide
(SiC) family which exhibit semi-conducting and semi-insulating
properties. SiXtron’s deposition produces
SiC thin films with
the following advantages compared to existing methods: 1) inexpensive
raw
inputs, 2) a lower deposition temperature than other chemical vapour
deposition
(CVD) processes, 3) eliminates the need to use toxic gases, 4) a rapid
deposition rate, and 5) the ability to add oxygen, nitrogen and other
elements.
Better Solutions: SiXtron can
produce amorphous SiC
(a-SiC) tailored to meet customer specifications. The
mechanical and
electrical properties of SiXtron’s films makes them the candidate of
choice for numerous applications in
high
performance electronic devices, optoelectronic devices, as well as in
many harsh
environment coating applications (e.g. sensors, MEMS, etc.)
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